Infineon IRLL2705TRPBF N-channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223

IRLL2705TRPBF Infineon  N-channel MOSFET, 5.2 A, 55 V HEXFET, 3+Tab-Pin SOT-223
IRLL2705TRPBF
Infineon

Product Information

Maximum Continuous Drain Current:
5.2 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1.739mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
65 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 5.2 A 55 V HEXFET 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IRLL2705TRPBF. Furthermore, the product is 3.7mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 1.739mm. Whereas, the minimum operating temperature of the product is -55 °c.

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ESD Control Selection Guide V1(Technical Reference)
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IRLL2705, HEXFET Power MOSFET(Technical Reference)

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