Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
20 nC @ 10 V, 8.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
4.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.04mm
Width:
5.89mm
Length:
4.9mm
Minimum Gate Threshold Voltage:
1V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Maximum Drain Source Resistance:
8 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
