Infineon IRF2804LPBF N-channel MOSFET, 75 A, 40 V HEXFET, 3-Pin TO-262

IRF2804LPBF Infineon  N-channel MOSFET, 75 A, 40 V HEXFET, 3-Pin TO-262
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Minimum Gate Threshold Voltage:
2V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
2 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Height:
10.54mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 75 A 40 V HEXFET 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IRF2804LPBF. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Whereas, the minimum operating temperature of the product is -55 °c. In addition, the height is 10.54mm. It has a maximum operating temperature of +175 °c.

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IRF2804SPbF, IRF2804LPbF AUTOMOTIVE MOSFET Data Sheet(Technical Reference)

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