Infineon IRFZ46NSTRLPBF N-channel MOSFET, 53 A, 55 V HEXFET, 3-Pin D2PAK

IRFZ46NSTRLPBF Infineon  N-channel MOSFET, 53 A, 55 V HEXFET, 3-Pin D2PAK
IRFZ46NSTRLPBF
Infineon

Product Information

Maximum Continuous Drain Current:
53 A
Transistor Material:
Si
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
72 nC @ 10 V
Channel Type:
N
Length:
10.54mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
107 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
10.48mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
10 mΩ
RoHs Compliant
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This is N-channel MOSFET 53 A 55 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFZ46NSTRLPBF. Furthermore, the product is 4.69mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.54mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 10.48mm. Whereas, the minimum operating temperature of the product is -55 °c.

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ESD Control Selection Guide V1(Technical Reference)
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IRFZ46NS, IRFZ46NL, HEXFET Power MOSFET(Technical Reference)

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