Infineon IRL8113PBF N-channel MOSFET, 105 A, 30 V HEXFET, 3-Pin TO-220AB

IRL8113PBF Infineon  N-channel MOSFET, 105 A, 30 V HEXFET, 3-Pin TO-220AB
IRL8113PBF
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
23 nC @ 4.5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Minimum Gate Threshold Voltage:
1.35V
Maximum Gate Threshold Voltage:
2.25V
Maximum Drain Source Resistance:
6 mΩ
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
105 A
Transistor Material:
Si
Height:
8.77mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 105 A 30 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRL8113PBF. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Whereas, the minimum operating temperature of the product is -55 °c. In addition, the height is 8.77mm. It has a maximum operating temperature of +175 °c.

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ESD Control Selection Guide V1(Technical Reference)
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MOSFET N-ch HEXFET 30V 105A(Technical Reference)

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