Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12.6 nC @ 10 V, 6.9 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Width:
1.8mm
Length:
3.1mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
50 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
