Vishay SI5419DU-T1-GE3 P-channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET

SI5419DU-T1-GE3 Vishay  P-channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
31 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Width:
1.98mm
Length:
3.08mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
PowerPAK ChipFET
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
33 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 9.9 A 30 V 8-Pin PowerPAK ChipFET manufactured by Vishay. The manufacturer part number is SI5419DU-T1-GE3. The product is available in surface mount configuration. In addition, the height is 0.85mm. Furthermore, the product is 1.98mm wide. Its accurate length is 3.08mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Si5419DU, P-Channel 30V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SI5419DU-T1-GE3 P-channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET. You can also check on our website or by contacting our customer support team for further order details on Vishay SI5419DU-T1-GE3 P-channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET.
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