Vishay SIHP33N60E-GE3 N-channel MOSFET, 33 A, 600 V E Series, 3-Pin TO-220AB

SIHP33N60E-GE3 Vishay  N-channel MOSFET, 33 A, 600 V E Series, 3-Pin TO-220AB
Vishay

Product Information

Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Type:
N
Length:
10.52mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
278 W
Series:
E Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.85mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
99 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 33 A 600 V E Series 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SIHP33N60E-GE3. Furthermore, the product is 4.7mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.52mm. The product is available in through hole configuration. The product e series, is a highly preferred choice for users. In addition, the height is 15.85mm. Whereas, the minimum operating temperature of the product is -55 °c.

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SiHP33N60E, E Series Power MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Vishay SIHP33N60E-GE3 N-channel MOSFET, 33 A, 600 V E Series, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHP33N60E-GE3 N-channel MOSFET, 33 A, 600 V E Series, 3-Pin TO-220AB.
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