Infineon IPI50R399CPXKSA1 N-channel MOSFET, 9 A, 560 V CoolMOS CP, 3-Pin I2PAK

IPI50R399CPXKSA1 Infineon  N-channel MOSFET, 9 A, 560 V CoolMOS CP, 3-Pin I2PAK
Infineon

Product Information

Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
10.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
83 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.45mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
399 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 9 A 560 V CoolMOS CP 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IPI50R399CPXKSA1. Furthermore, the product is 4.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.2mm. The product is available in through hole configuration. The product coolmos cp, is a highly preferred choice for users. In addition, the height is 9.45mm. Whereas, the minimum operating temperature of the product is -55 °c.

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CoolMOS™ Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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