Infineon IRF2805STRLPBF N-channel MOSFET, 135 A, 55 V HEXFET, 3-Pin D2PAK

Infineon

Product Information

Maximum Continuous Drain Current:
135 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
150 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.7 mΩ
RoHs Compliant
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This is N-channel MOSFET 135 A 55 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF2805STRLPBF. Furthermore, the product is 9.65mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c.

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ESD Control Selection Guide V1(Technical Reference)
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IRF2805SPbF, IRF2805LPbF, HEXFET Power MOSFET(Technical Reference)

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