Infineon IRFI4227PBF N-channel MOSFET, 26 A, 200 V HEXFET, 3-Pin TO-220FP

IRFI4227PBF Infineon  N-channel MOSFET, 26 A, 200 V HEXFET, 3-Pin TO-220FP
IRFI4227PBF
Infineon

Product Information

Maximum Continuous Drain Current:
26 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Channel Type:
N
Length:
10.63mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
46 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.12mm
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
25 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 26 A 200 V HEXFET 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IRFI4227PBF. Furthermore, the product is 4.83mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.63mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 16.12mm. Whereas, the minimum operating temperature of the product is -40 °c.

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IRFI4227PBF HEXFET Power MOSFET Data Sheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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