Infineon IRFS3107PBF N-channel MOSFET, 230 A, 75 V HEXFET, 3-Pin D2PAK

IRFS3107PBF Infineon  N-channel MOSFET, 230 A, 75 V HEXFET, 3-Pin D2PAK
IRFS3107PBF
Infineon

Product Information

Maximum Drain Source Voltage:
75 V
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
370 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Minimum Gate Threshold Voltage:
2V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
230 A
Transistor Material:
Si
Height:
4.83mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 230 A 75 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS3107PBF. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Whereas, the minimum operating temperature of the product is -55 °c. In addition, the height is 4.83mm. It has a maximum operating temperature of +175 °c.

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ESD Control Selection Guide V1(Technical Reference)
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MOSFET N-ch HEXFET 75V 230A D2PAK(Technical Reference)

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