Toshiba TK10P60W,RVQ(S N-channel MOSFET, 9.7 A, 600 V TK, 3-Pin DPAK

TK10P60W-RVQ-S Toshiba TK10P60W,RVQ(S N-channel MOSFET, 9.7 A, 600 V TK, 3-Pin DPAK
TK10P60W,RVQ(S
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
80 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
2.3mm
Width:
7.18mm
Length:
6.6mm
Maximum Drain Source Resistance:
430 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9.7 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 9.7 A 600 V TK 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK10P60W,RVQ(S. The product is available in surface mount configuration. The product tk, is a highly preferred choice for users. In addition, the height is 2.3mm. Furthermore, the product is 7.18mm wide. Its accurate length is 6.6mm. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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TK10P60W, Silicon N-Channel DTMOS MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Toshiba TK10P60W,RVQ(S N-channel MOSFET, 9.7 A, 600 V TK, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK10P60W,RVQ(S N-channel MOSFET, 9.7 A, 600 V TK, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13996397 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number TK10P60W,RVQ(S.
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