Toshiba TK20E60W,S1VX(S N-channel MOSFET, 20 A, 600 V TK, 3-Pin TO-220

TK20E60W-S1VX-S Toshiba TK20E60W,S1VX(S N-channel MOSFET, 20 A, 600 V TK, 3-Pin TO-220
TK20E60W,S1VX(S
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
165 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
15.1mm
Width:
4.45mm
Length:
10.16mm
Maximum Drain Source Resistance:
155 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 20 A 600 V TK 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK20E60W,S1VX(S. The product is available in through hole configuration. The product tk, is a highly preferred choice for users. In addition, the height is 15.1mm. Furthermore, the product is 4.45mm wide. Its accurate length is 10.16mm. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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TK20E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET13996400 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number TK20E60W,S1VX(S.
Yes. You can also search TK20E60W,S1VX(S on website for other similar products.
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