Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
11.6 nC @ 4.5 V, 15.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.14 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
28 mΩ, 45 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.2 A, 8.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
