Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
2.9 nC @ 10 V, 3.5 nC @ 50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.36 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
1.45 Ω, 900 mΩ
Package Type:
SOIC
Number of Elements per Chip:
4
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A, 850 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Full Bridge
