Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
1.65 nC @ 5 V, 2.4 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.6mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
300 mΩ, 425 mΩ
Package Type:
SM
Number of Elements per Chip:
4
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.8 A, 1.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Full Bridge
