Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
3.2 nC @ 5 V, 5.9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
806 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.4mm
Length:
3.05mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
400 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
