Vishay SI7900AEDN-T1-GE3 Dual N-channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212

SI7900AEDN-T1-GE3 Vishay  Dual N-channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
10.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.07mm
Width:
3.15mm
Length:
3.15mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
36 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Common Drain
RoHs Compliant
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This is Dual N-channel MOSFET 6 A 20 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7900AEDN-T1-GE3. The product is available in surface mount configuration. In addition, the height is 1.07mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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ESD Control Selection Guide V1(Technical Reference)
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Si7900AEDN, Dual N-Channel 20V (D-S) MOSFET, Common Drain(Technical Reference)

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FAQs

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Yes. You can also search SI7900AEDN-T1-GE3 on website for other similar products.
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