Infineon IRLR7821PBF N-channel MOSFET, 65 A, 30 V HEXFET, 3-Pin DPAK

IRLR7821PBF Infineon  N-channel MOSFET, 65 A, 30 V HEXFET, 3-Pin DPAK
IRLR7821PBF
Infineon

Product Information

Maximum Continuous Drain Current:
65 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
10 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 mΩ
RoHs Compliant
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This is N-channel MOSFET 65 A 30 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRLR7821PBF. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c.

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ESD Control Selection Guide V1(Technical Reference)
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IRLR7821PBF Data Sheet(Technical Reference)

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Yes. You can also search IRLR7821PBF on website for other similar products.
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