Vishay Si1965DH-T1-GE3 Dual P-channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363

Enrgtech Part No: ET14031677
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Manufacturer Part No:
Si1965DH-T1-GE3
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Manufacturer: Vishay

Si1965DH-T1-GE3 Vishay Dual P-channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363

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Product Information

Maximum Drain Source Voltage:

12 V

Typical Gate Charge @ Vgs:

2.8 nC @ 8 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Maximum Power Dissipation:

1.25 W

Maximum Gate Source Voltage:

-8 V, +8 V

Height:

1mm

Width:

1.35mm

Length:

2.2mm

Minimum Gate Threshold Voltage:

0.4V

Package Type:

SOT-363 (SC-88)

Number of Elements per Chip:

Checking for live stock

This is Dual P-channel MOSFET 1.2 A 12 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is Si1965DH-T1-GE3. The product is available in surface mount configuration. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

Si1965DH, Dual P-Channel 12V (D-S) MOSFET(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Vishay Si1965DH-T1-GE3 Dual P-channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363

Si1965DH-T1-GE3

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