Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
17.5 nC @ 4.5 V, 37 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.55mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12.7 A
Transistor Material:
Si
Maximum Drain Source Resistance:
9 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
