Infineon BSS806NEH6327XTSA1 N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23

BSS806NEH6327XTSA1 Infineon  N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23
Infineon

Product Information

Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.75V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 2.5 V
Channel Type:
N
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
82 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 2.3 A 20 V OptiMOS 2 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS806NEH6327XTSA1. Furthermore, the product is 1.3mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. The product is available in surface mount configuration. The product optimos 2, is a highly preferred choice for users. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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BSS806NE OptiMOS2 Small Signal Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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