Infineon IRFR9120NTRPBF P-channel MOSFET, 6.6 A, 100 V HEXFET, 3-Pin DPAK

IRFR9120NTRPBF Infineon  P-channel MOSFET, 6.6 A, 100 V HEXFET, 3-Pin DPAK
IRFR9120NTRPBF
Infineon

Product Information

Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
27 nC @ 10 V
Channel Type:
P
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
40 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
480 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 6.6 A 100 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR9120NTRPBF. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRFR9120NTRPBF P-channel MOSFET, 6.6 A, 100 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFR9120NTRPBF P-channel MOSFET, 6.6 A, 100 V HEXFET, 3-Pin DPAK.
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