Infineon IRFU13N20DPBF N-channel MOSFET, 13 A, 200 V HEXFET, 3-Pin IPAK

IRFU13N20DPBF Infineon  N-channel MOSFET, 13 A, 200 V HEXFET, 3-Pin IPAK
Infineon

Product Information

Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
9.78mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
235 mΩ
RoHs Compliant
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This is N-channel MOSFET 13 A 200 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRFU13N20DPBF. Furthermore, the product is 9.78mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IRFR13N20DPbF, IRFU13N20DPbF, HEXFET Power MOSFET (SMPS MOSFET)(Technical Reference)

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