Toshiba TK39J60W5,S1VQ(O N-channel MOSFET, 39 A, 600 V TK, 3-Pin TO-3PN

TK39J60W5-S1VQ-O Toshiba TK39J60W5,S1VQ(O N-channel MOSFET, 39 A, 600 V TK, 3-Pin TO-3PN
TK39J60W5,S1VQ(O
Toshiba

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
135 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
20mm
Width:
4.5mm
Length:
15.5mm
Maximum Drain Source Resistance:
74 mΩ
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
39 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 39 A 600 V TK 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is TK39J60W5,S1VQ(O. The product is available in through hole configuration. The product tk, is a highly preferred choice for users. In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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TK39J60W5 N-Channel MOSFET Datasheet(Rev.5.0)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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Yes. You can also search TK39J60W5,S1VQ(O on website for other similar products.
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