Vishay SIS415DNT-T1-GE3 P-channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212

SIS415DNT-T1-GE3 Vishay  P-channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
117 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Width:
3.4mm
Length:
3.4mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Maximum Drain Source Resistance:
9.5 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 22 A 20 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SIS415DNT-T1-GE3. The product is available in surface mount configuration. In addition, the height is 0.8mm. Furthermore, the product is 3.4mm wide. Its accurate length is 3.4mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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SiS415DNT, P-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SIS415DNT-T1-GE3 P-channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212. You can also check on our website or by contacting our customer support team for further order details on Vishay SIS415DNT-T1-GE3 P-channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212.
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