Infineon IPI65R280E6XKSA1 N-channel MOSFET, 13.8 A, 700 V CoolMOS E6, 3-Pin TO-262

IPI65R280E6XKSA1 Infineon  N-channel MOSFET, 13.8 A, 700 V CoolMOS E6, 3-Pin TO-262
Infineon

Product Information

Maximum Continuous Drain Current:
13.8 A
Transistor Material:
Si
Width:
4.52mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
700 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
280 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
104 W
Series:
CoolMOS E6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.45mm
Minimum Operating Temperature:
-55 °C
RoHs Compliant
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This is N-channel MOSFET 13.8 A 700 V CoolMOS E6 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IPI65R280E6XKSA1. Furthermore, the product is 4.52mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. The product is available in through hole configuration. The product coolmos e6, is a highly preferred choice for users. In addition, the height is 9.45mm. Whereas, the minimum operating temperature of the product is -55 °c.

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650V CoolMOS™ C6 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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