Infineon IRF1010EPBF N-channel MOSFET, 84 A, 60 V HEXFET, 3-Pin TO-220AB

IRF1010EPBF Infineon  N-channel MOSFET, 84 A, 60 V HEXFET, 3-Pin TO-220AB
IRF1010EPBF
Infineon

Product Information

Maximum Continuous Drain Current:
84 A
Transistor Material:
Si
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
130 nC @ 10 V
Channel Type:
N
Length:
10.54mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
8.77mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12 mΩ
RoHs Compliant
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This is N-channel MOSFET 84 A 60 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF1010EPBF. Furthermore, the product is 4.69mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.54mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 8.77mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRF1010EPBF N-channel MOSFET, 84 A, 60 V HEXFET, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF1010EPBF N-channel MOSFET, 84 A, 60 V HEXFET, 3-Pin TO-220AB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14089464 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number IRF1010EPBF.
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