Infineon IRFR4105ZPBF N-channel MOSFET, 30 A, 55 V HEXFET, 3-Pin DPAK

IRFR4105ZPBF Infineon  N-channel MOSFET, 30 A, 55 V HEXFET, 3-Pin DPAK
IRFR4105ZPBF
Infineon

Product Information

Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
48 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
24.5 mΩ
RoHs Compliant
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This is N-channel MOSFET 30 A 55 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR4105ZPBF. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IRFR4105ZTRPBF HEXFET Power MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14089505 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number IRFR4105ZPBF.
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