Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.6mm
Width:
1.25mm
Length:
1.7mm
Maximum Drain Source Resistance:
1.7 Ω, 6 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
280 mA, 620 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
