Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V, 6.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.45 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.78mm
Width:
2.075mm
Length:
3.08mm
Maximum Drain Source Resistance:
180 mΩ, 330 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.1 A, 3.7 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
