Maximum Continuous Drain Current:
404 A
Transistor Material:
SiC
Width:
61.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
Half Bridge
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1025 nC @ 20 V, 1025 nC @ 5 V
Channel Type:
N
Length:
106.4mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
1.66 kW
Maximum Gate Source Voltage:
-10 V, +25 V
Height:
30mm
Forward Diode Voltage:
2.5V
Maximum Drain Source Resistance:
9.8 mΩ
