Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
DP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 5 V, 38 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
60 W
Series:
TK
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.8 mΩ
