Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
19.1 nC @ 10 V, 21.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.4V
Height:
1.5mm
Width:
3.95mm
Length:
4.95mm
Maximum Drain Source Resistance:
32 mΩ, 55 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.1 A, 9 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
