Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
80 mΩ
Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB350
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
47mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
815pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta), 14A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
