Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
204 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 30V 34A (Ta), 80A (Tc) 300W (Tc) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB883
Gate Charge (Qg) (Max) @ Vgs:
265nC @ 10V
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11400pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
34A (Ta), 80A (Tc)
Customer Reference:
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
