Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.3 nC @ 4.5 V, 1.65 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
220 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.6mm
Width:
1.2mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
2.4 Ω, 760 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
