Vishay Si1416EDH-T1-GE3 N-channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363

Si1416EDH-T1-GE3 Vishay  N-channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
7.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOT-363
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
77 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 3.9 A 30 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is Si1416EDH-T1-GE3. The product is available in surface mount configuration. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Si1416EDH, N-Channel 30V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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