Vishay SI1902CDL-T1-GE3 N-channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363

SI1902CDL-T1-GE3 Vishay  N-channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.42 W
Maximum Gate Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
2.4mm
Length:
2.2mm
Maximum Drain Source Resistance:
306 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.1 A
Minimum Gate Threshold Voltage:
0.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1.1 A 20 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI1902CDL-T1-GE3. The product is available in surface mount configuration. In addition, the height is 1mm. Furthermore, the product is 2.4mm wide. Its accurate length is 2.2mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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