Vishay SIB406EDK-T1-GE3 N-channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75

SIB406EDK-T1-GE3 Vishay  N-channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
7.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
10 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Width:
1.7mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SC-75
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
63 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 5.1 A 20 V 6-Pin SC-75 manufactured by Vishay. The manufacturer part number is SIB406EDK-T1-GE3. The product is available in surface mount configuration. In addition, the height is 0.8mm. Furthermore, the product is 1.7mm wide. Its accurate length is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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SiB406EDK, N-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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