Vishay SIHF630STRL-GE3 N-channel MOSFET, 9 A, 200 V, 3-Pin D2PAK

SIHF630STRL-GE3 Vishay  N-channel MOSFET, 9 A, 200 V, 3-Pin D2PAK
SIHF630STRL-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
74 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Width:
9.65mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
400 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 9 A 200 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHF630STRL-GE3. The product is available in surface mount configuration. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.67mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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IRF630S, SiHF630S, Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET16723685 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number SIHF630STRL-GE3.
Yes. You can also search SIHF630STRL-GE3 on website for other similar products.
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