Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
17.9 nC @ 8 V, 19.6 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.555mm
Width:
2.075mm
Length:
2.08mm
Maximum Drain Source Resistance:
65 mΩ, 170 mΩ
Package Type:
U-DFN2020
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A, 7.2 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
