Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.5mm
Width:
3.95mm
Length:
4.95mm
Maximum Drain Source Resistance:
32 mΩ, 53 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7 A, 8.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
