Diodes Inc DMT6010LFG-7 N-channel MOSFET, 30 A, 60 V, 8-Pin POWERDI3333

DMT6010LFG-7 Diodes Inc  N-channel MOSFET, 30 A, 60 V, 8-Pin POWERDI3333
DiodesZetex

Product Information

Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
41.3 nC @ 10 V
Channel Type:
N
Length:
3.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
41 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
11.5 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 30 A 60 V 8-Pin POWERDI3333 manufactured by DiodesZetex. The manufacturer part number is DMT6010LFG-7. Furthermore, the product is 3.35mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 3.35mm. The product is available in surface mount configuration. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c.

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DMT6010LFG, N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Diodes Inc DMT6010LFG-7 N-channel MOSFET, 30 A, 60 V, 8-Pin POWERDI3333. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMT6010LFG-7 N-channel MOSFET, 30 A, 60 V, 8-Pin POWERDI3333.
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