Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V, 5.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.6mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
180 mΩ, 330 mΩ
Package Type:
SM
Number of Elements per Chip:
4
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.8 A, 3.1 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Full Bridge
