Infineon BSC011N03LSIATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON

BSC011N03LSIATMA1 Infineon  N-channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON
BSC011N03LSIATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
34 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
96 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Width:
5.35mm
Length:
6.1mm
Maximum Drain Source Resistance:
1.4 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Forward Diode Voltage:
0.56V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 100 A 30 V OptiMOS 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC011N03LSIATMA1. The product is available in surface mount configuration. The product optimos, is a highly preferred choice for users. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.1mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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BSC047N08NS3G(Technical Reference)

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You will get a confirmation email regarding your order of Infineon BSC011N03LSIATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSC011N03LSIATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792435 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number BSC011N03LSIATMA1.
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