Infineon BSO080P03SHXUMA1 P-channel MOSFET, 14.9 A, 30 V OptiMOS P, 8-Pin DSO

BSO080P03SHXUMA1 Infineon  P-channel MOSFET, 14.9 A, 30 V OptiMOS P, 8-Pin DSO
Infineon

Product Information

Maximum Continuous Drain Current:
14.9 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DSO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
102 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.65mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 14.9 A 30 V OptiMOS P 8-Pin DSO manufactured by Infineon. The manufacturer part number is BSO080P03SHXUMA1. Furthermore, the product is 4mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 5mm. The product is available in surface mount configuration. The product optimos p, is a highly preferred choice for users. In addition, the height is 1.65mm. Whereas, the minimum operating temperature of the product is -55 °c.

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ESD Control Selection Guide V1(Technical Reference)
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BSO080P03S H, OptiMOS-P Power-Transistor(Technical Reference)

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