Infineon BSP129H6327XTSA1 N-channel MOSFET, 350 mA, 240 V Depletion SIPMOS, 3+Tab-Pin SOT-223

BSP129H6327XTSA1 Infineon  N-channel MOSFET, 350 mA, 240 V Depletion SIPMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Continuous Drain Current:
350 mA
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
240 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.8 nC @ 5 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Depletion
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
20 Ω
RoHs Compliant
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This is N-channel MOSFET 350 mA 240 V Depletion SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP129H6327XTSA1. Furthermore, the product is 3.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. The product is available in surface mount configuration. The product sipmos, is a highly preferred choice for users. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon BSP129H6327XTSA1 N-channel MOSFET, 350 mA, 240 V Depletion SIPMOS, 3+Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on Infineon BSP129H6327XTSA1 N-channel MOSFET, 350 mA, 240 V Depletion SIPMOS, 3+Tab-Pin SOT-223.
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