Infineon BSP135H6327XTSA1 N-channel MOSFET, 120 mA, 600 V Depletion SIPMOS, 3+Tab-Pin SOT-223

BSP135H6327XTSA1 Infineon  N-channel MOSFET, 120 mA, 600 V Depletion SIPMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
3.7 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Width:
3.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
45 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 120 mA 600 V Depletion SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP135H6327XTSA1. The product is available in surface mount configuration. The product sipmos, is a highly preferred choice for users. In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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